650V-750V SiC MOSFET 碳化矽MOSFET
• G3R™ Technology for +15V Gate Drive:
Designed for efficient control, allowing a high gate drive voltage
which enhances switching performance and stability.
• Superior QG x RDS(ON) Figure of Merit:
Optimizes performance by lowering both gate charge (QG) and on-resistance (RDS(ON)),
reducing power losses and improving overall efficiency.
• Low Gate Charge and Device Capacitances:
Reduces switching losses, enabling faster switching speeds.
• Low Conduction Losses at High Temperature:
Maintains efficiency under high-temperature operation,
essential for reliable performance in demanding applications.
• Superior Avalanche and Short Circuit Ruggedness:
Offers protection during conditions of high power stress, improving device durability.
• Normally-off Stable Operation up to 175°C:
Supports thermal stability, allowing for high-reliability operation under heavy load
and high-temperature environments.
• Fast and Reliable Body Diode:
Improves efficiency in applications where body diode conduction is frequent,
reducing overall system losses.
• Optimized Packaging with Kelvin Source Connection:
Enhances switching performance by providing a dedicated source connection,
reducing parasitic inductance.
Applications:
• xEV OBC (On-Board Charger) & DC-DC Conversion:
Used in electric vehicles for efficient battery charging and power conversion.
• Solar/PV (Photovoltaic) Systems:
Ideal for inverters and DC-DC converters in renewable energy systems.
• Energy Storage Systems:
Used for managing power flow in battery energy storage.
• Server & Telecom Power Supply:
Provides high-efficiency power conversion for servers and telecommunication equipment.
• Uninterruptible Power Supply (UPS):
Ensures reliable power during outages, minimizing downtime.
• Motor Control:
Suitable for applications requiring precise and efficient motor control.
• Class D Amplifier:
Used in audio applications for efficient, low-heat amplification.
